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Power F-MOS FETs
2SK3046
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS > 130mJ q VGSS = 30V guaranteed q High-speed switching: tf = 60ns q No secondary breakdown
unit: mm
9.90.3 4.60.2 2.90.2
s Applications
q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
15.00.5
3.20.1
13.70.2 4.20.2
1.40.2 1.60.2 0.80.1
3.00.5
2.60.1
0.550.15
s Absolute Maximum Ratings (TC = 25C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 500 30 7 14 130 40 2 150 -55 to +150 Unit V V A A mJ W C C
1 2
2.540.3 3 5.080.5
1: Gate 2: Drain 3: Source TO-220D Package
Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature
*
TC = 25C Ta = 25C
L = 5.4mH, IL = 7A, 1 pulse
s Electrical Characteristics (TC = 25C)
Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Coss td(on) tr td(off) tf VGS = 10V, ID = 5A VDD = 150V, RL = 30 Conditions VDS = 400V, VGS = 0 VGS = 30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 4A VDS = 25V, ID = 4A IDR = 7A, VGS = 0 1200 VDS = 20V, VGS = 0, f = 1MHz 160 70 30 70 140 60 3 500 2 0.7 5 -1.6 5 1 min typ max 0.1 1 Unit mA A V V S V pF pF pF ns ns ns ns
Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time (delay time) Rise time Turn-off time (delay time) Fall time
1
Power F-MOS FETs
Area of safe operation (ASO)
100 30 10 3 1 0.3 10ms 0.1 100ms 0.03 0.01 1 3 10 30 100 300 1000 60
2SK3046
PD Ta
100
EAS Tj
Avalanche energy capacity EAS (mJ)
Allowable power dissipation PD (W)
Non repetitive pulse TC=25C t=10s
(1) TC=Ta (2) Without heat sink 50
80
Drain current ID (A)
40 (1) 30
DC 100s 1ms
60
40
20
10 (2) 0 0 20 40 60 80 100 120 140 160
20
0 25
50
75
100
125
150
175
Drain to source voltage VDS (V)
Ambient temperature Ta (C)
Junction temperature Tj (C)
ID VDS
16 TC=25C 14 VGS=15V 10V 8 12 10 8 6 4 5V 2 0 0 10 20 30 40 50W 4V 50 60 0 0 2 5.5V 7V 6V 10
ID VGS
6 VDS=25V TC=0C 25C 150C 100C
Vth TC
VDS=25V ID=1mA 5
Gate threshold voltage Vth (V)
10 12
Drain current ID (A)
Drain current ID (A)
4
6
3
4
2
2
1
0 4 6 8 0 25 50 75 100 125 150
Drain to source voltage VDS (V)
Gate to source voltage VGS (V)
Case temperature TC (C)
VDS VGS
Drain to source ON-resistance RDS(on) ()
40 TC=25C 2.4
RDS(on) ID
6
| Yfs | ID
Forward transfer admittance |Yfs| (S)
VGS=10V VDS=25V TC=25C 5
Drain to source voltage VDS (V)
2.0
30
1.6 TC=150C 1.2 100C
4
20
3
ID=14A 10
1.75A
0.8
25C 0C
2
7A 3.5A 5 10 15 20 25 30
0.4
1
0 0
0 0 2 4 6 8 10
0 0 2 4 6 8 10
Gate to source voltage VGS (V)
Drain current ID (A)
Drain current ID (A)
2
Power F-MOS FETs
Ciss, Coss, Crss VDS
Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
10000 f=1MHz TC=25C
2SK3046
VDS, VGS Qg
400 16 14 12 VDS 10 8 6 4 2 0 60 300 ID=8A TC=25C
td(on), tr, tf, td(off) ID
VDD=200V VGS=10V TC=25C
Drain to source voltage VDS (V)
Gate to source voltage VGS (V)
350 300 250 200 150 100 50 0 0 10 20 30 40
Switching time td(on),tr,tf,td(off) (ns)
Ciss
250
1000
200
100
Coss Crss
150 td(on) 100 tf tr 50 td(off)
VGS
10
1 0 50 100 150 200
0 0 2 4 6 8 10
50
Drain to source voltage VDS (V)
Gate charge amount Qg (nC)
Drain current ID (A)
Rth(t) t
102 (1) Without heat sink (2) With a 100 x 100 x 2mm Al heat sink (1)
Thermal resistance Rth(t) (C/W)
10
(2)
1
10-1
10-2 10-4
10-3
10-2
10-1
1
10
102
103
104
Time t (s)
3

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